| 1. | Fabrication of nanoelectronic resonant tunneling diodes
纳电子器件谐振隧道二极管的研制
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| 2. | P - well si sige - based resonant tunneling diode dc parameters
共振隧穿二极管及其直流参数提取
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| 3. | A monolithic integrated logic circuit of resonant tunneling diodes and a hemt
的单片集成逻辑电路
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| 4. | Frequency characteristics and analysis of quantum resonant tunneling diodes
量子共振隧穿二极管的频率特性与分析
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| 5. | Tunnel diode amplifier
隧道二极管放大器
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| 6. | The filtering effect could be amplified by placing the ferromagnet in a resonant tunnel diode
若将铁磁体放入共振穿隧二极体中，可以放大过滤效果。
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| 7. | Conventional resonant tunnel diodes allow currents to flow at a specific voltage , one at which the electrons have an energy that is resonant with the tunneling barrier
传统共振穿隧二极体在特定电位下可让电流通过，此时电子的能量共振于（即等于）穿隧位障。
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| 8. | In 1995 , the experiment of resonant tunneling diode in a magnetic field tiled by an angle with respect to the tunneling direction was accomplished by t . fromhold and b . willkinson etc . subsequently , e . e . narimanov and a . d . stone have theoretically studied this system with the square - potential well model
例如， 1995年， t . fromhold和b . willkinson等人所做的倾斜磁场作用下的共振隧穿二极管实验，以及后来由e . e . narimanov和a . d . stone等人采用方势阱模型进行的理论研究。
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